This case study shows how Imec used the Keysight E4727B Advanced Low-Frequency Noise Analyzer to investigate reliability in IGZO thin-film transistors and gate-all-around nanosheet devices. Conventional methods could not easily separate dielectric-trap effects from channel degradation or provide nondestructive wafer-level statistics. Combined DC and 1/f noise measurements linked negative threshold-voltage shifts in IGZO devices to reversible conduction-band tail-state broadening rather than permanent dielectric damage. Wafer-level testing of 94 p-type nanosheet devices also found noise and extracted trap densities comparable to planar HKMG devices with the same gate stack. The approach supports faster root-cause analysis, predictive reliability assessment, process optimization, and benchma

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